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March 25, 2021 04:33 am GMT

(PR) Samsung Develops Industry's First HKMG-Based DDR5 Memory; Ideal for Bandwidth-Intensive Advanced Computing Applications

Samsung Electronics Co., Ltd., the world leader in advanced memory technology, today announced that it has expanded its DDR5 DRAM memory portfolio with the industry's first 512 GB DDR5 module based on High-K Metal Gate (HKMG) process technology. Delivering more than twice the performance of DDR4 at up to 7,200 megabits per second (Mbps), the new DDR5 will be capable of orchestrating the most extreme compute-hungry, high-bandwidth workloads in supercomputing, artificial intelligence (AI) and machine learning (ML), as well as data analytics applications.

"Samsung is the only semiconductor company with logic and memory capabilities and the expertise to incorporate HKMG cutting-edge logic technology into memory product development," said Young-Soo Sohn, Vice President of the DRAM Memory Planning/Enabling Group at Samsung Electronics. "By bringing this type of process innovation to DRAM manufacturing, we are able to offer our customers high-performance, yet energy-efficient memory solutions to power the computers needed for medical research, financial markets, autonomous driving, smart cities and beyond."

Original Link: https://www.techpowerup.com/280143/samsung-develops-industrys-first-hkmg-based-ddr5-memory-ideal-for-bandwidth-intensive-advanced-computing-applicatio

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