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October 13, 2015 12:00 am

Ion-Based Data Allows Atom-Sized Storage Cells Similar To Brain Structure

An anonymous reader writes: Researchers in Germany have developed a method of writing data with ions and retrieving it with electrons that opens the path for atom-sized storage devices which are similar to structures found in the human brain. The Nanoelectronic group at Kiel University joined the Ruhr Universitat Bochum to seek alternatives to conventional memory technologies, which involve the displacement of electrons by applying voltage, but which promise little more advance in terms of capacity or form-factor. The new technique is based on electrical resistance using a solid ion conductor.

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