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June 2, 2015 10:00 pm

Fabs Now Manufacturing Carbon Nanotube Memory, Which Could Replace NAND and DRAM

Lucas123 writes: Nantero, the company that invented carbon nanotube-based non-volatile memory in 2001 and has been developing it since, has announced that seven chip fabrication plants are now manufacturing its Nano-RAM (NRAM) wafers and test chips. The company also announced aerospace giant Lockheed Martin and Schlumberger Ltd., the world's largest gas and oil exploration and drilling company, as customers seeking to use its chip technology. The memory, which can withstand 300 degrees Celsius temperatures for years without losing data, is natively thousands of times faster than NAND flash and has virtually infinite read/write resilience. Nantero plans on creating gum sticks SSDs using DDR4 interfaces. NRAM has the potential to create memory that is vastly more dense that NAND flash, as its transistors can shrink to below 5 nanometers in size, three times more dense than today's densest NAND flash. At the same time, NRAM is up against a robust field of new memory technologies that are expected to challenge NAND flash in speed, endurance and capacity, such as Phase-Change Memory and Ferroelectric RAM (FRAM).

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