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August 26, 2022 03:19 am GMT
GAA or "gates-all-around" technology is vital to building transistors in the 3 nm and 2 nm silicon fabrication nodes. Samsung is already using GAA for its 3 nm node, while TSMC intends to use it with its 2N (2 nm) node. Intel is expected to use it with its Intel 20A (20 angstrom, or 2 nanometers) node. Both Intel and TSMC will debut nodes powered by GAAFETs for mass-production in 2024. The US Government has already banned the sales of EUV lithography machines to China, as well as machines fabricating 3D NAND flash chips with greater than 128 layers or 14 nm. In the past, technology embargoes have totally stopped China from copying or reverse-engineering western tech, or luring Taiwanese engineers armed with industry secrets away on the promise of wealth and a comfortable life in the Mainland.
Original Link: https://www.techpowerup.com/298192/us-institutes-gaa-fet-technology-eda-software-ban-on-china-stalling-sub-3nm-nodes
US Institutes GAA-FET Technology EDA Software Ban on China, Stalling sub-3nm Nodes
The US Government has instituted a ban on supply of GAA-FET EDA software to China (the Chinese government and companies in China). Humans can no longer design every single circuit on chips with tens of billions of transistors, and so EDA (electronics design automation) software is used to micromanage design based broadly on what chip architects want. Synopsys, Cadence, and Siemens are major EDA software suppliers. Intel is rumored to use an in-house EDA software that it doesn't sell, although this could change with the company roping in third-party foundries, such as TSMC, for cutting-edge logic chips (which will need the software to make sense of Intel's designs).GAA or "gates-all-around" technology is vital to building transistors in the 3 nm and 2 nm silicon fabrication nodes. Samsung is already using GAA for its 3 nm node, while TSMC intends to use it with its 2N (2 nm) node. Intel is expected to use it with its Intel 20A (20 angstrom, or 2 nanometers) node. Both Intel and TSMC will debut nodes powered by GAAFETs for mass-production in 2024. The US Government has already banned the sales of EUV lithography machines to China, as well as machines fabricating 3D NAND flash chips with greater than 128 layers or 14 nm. In the past, technology embargoes have totally stopped China from copying or reverse-engineering western tech, or luring Taiwanese engineers armed with industry secrets away on the promise of wealth and a comfortable life in the Mainland.
Original Link: https://www.techpowerup.com/298192/us-institutes-gaa-fet-technology-eda-software-ban-on-china-stalling-sub-3nm-nodes
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