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Samsung ships first 3D vertical NAND flash, defies memory scaling limits
The main challenge in producing higher-capacity flash storage is one of scale -- as density goes up, so does cell interference and the chances of a breakdown. Samsung may have overcome that barrier (if temporarily) by mass-producing the first 3D vertical NAND memory, or V-NAND. Instead of putting memory cells on a conventional 2D plane, the company reworked its long-serving Charge Trap Flash technology to create a 3D cell structure with more breathing room. The result is flash that improves both reliability and speed at higher densities; Samsung claims that the new technology is 2-10X more reliable than its ancestors, and twice as quick at writing data. The initial V-NAND chip offers a 128-gigabit (16GB) capacity that we've seen before, but its underlying technique should scale quickly when a chip can include as many as 24 stacked cell layers. Although Samsung hasn't named the first devices with V-NAND inside, we won't be surprised if our next phone or SSD is particularly spacious.
Source: Samsung
Original Link: http://www.engadget.com/2013/08/05/samsung-ships-first-3d-vertical-nand-flash/?utm_medium=feed&utm_source=Feed_Classic&utm_campaign=Engadget
Engadget
Engadget is a web magazine with obsessive daily coverage of everything new in gadgets and consumer electronics. Engadget was launched in March of 2004 in partnership with the Weblogs, Inc. Network (WIMore About this Source Visit Engadget