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August 13, 2012 01:05 pm

IBM Claims Spintronics Memory Breakthrough


CWmike writes with this excerpt from ComputerWorld: "In a paper set to be published this week in the scientific journal Nature, IBM researchers are claiming a huge breakthrough in spintronics, a technology that could significantly boost capacity and lower power use of memory and storage devices. Spintronics, short for 'spin transport electronics,' uses the natural spin of electrons within a magnetic field in combination with a read/write head to lay down and read back bits of data on semiconductor material. By changing an electron's axis in an up or down orientation — all relative to the space in which it exists — physicists are able to have it represent bits of data. For example, an electron on an upward axis is a one; and an electron on a downward axis is a zero. Spintronics has long faced an intrinsic problem because electrons have only held an 'up or down' orientation for 100 picoseconds. A picosecond is one trillionth of a second [one thousandth of a nanosecond.] One hundred picoseconds is not enough time for a compute cycle, so transistors cannot complete a compute function and data storage is not persistent. In the study published in Nature, IBM Research and the Solid State Physics Laboratory at ETH Zurich announced they had found a way to synchronize electrons, which could extend their spin lifetime by 30 times to 1.1 nanoseconds, the time it takes for a 1 GHz processor to cycle."

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Original Link: http://rss.slashdot.org/~r/Slashdot/slashdot/~3/GVJA7PXF0ps/ibm-claims-spintronics-memory-breakthrough

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